The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

نویسندگان

چکیده

Effect of the pump power on photoluminescence intensity for dislocation-related luminescence centers is studied in p-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result three-stage annealing used formation getter fast diffusing impurities microelectronics technology while D1 and D2 were produced during subsequent flow argon at 1000 o C. The excitation efficiencies lines measured temperature liquid helium. Keywords: luminescence, silicon, precipitates, efficiency.

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ژورنال

عنوان ژورنال: Fizika i tehnika poluprovodnikov

سال: 2022

ISSN: ['0015-3222', '1726-7315']

DOI: https://doi.org/10.21883/sc.2022.06.53535.9832