The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates
نویسندگان
چکیده
Effect of the pump power on photoluminescence intensity for dislocation-related luminescence centers is studied in p-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result three-stage annealing used formation getter fast diffusing impurities microelectronics technology while D1 and D2 were produced during subsequent flow argon at 1000 o C. The excitation efficiencies lines measured temperature liquid helium. Keywords: luminescence, silicon, precipitates, efficiency.
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ژورنال
عنوان ژورنال: Fizika i tehnika poluprovodnikov
سال: 2022
ISSN: ['0015-3222', '1726-7315']
DOI: https://doi.org/10.21883/sc.2022.06.53535.9832